HKShanhai Group Limited’s UCSX-SD38TBEM2NK9 is a high-performance 3.8TB 2.5-inch Enter Value 6G SATA Micron G1 SSD (SED), designed to deliver exceptional storage efficiency and security. Ideal for data centers and enterprises, it offers reliable storage solutions for various high-demand applications.
UCSX-SD38TBEM2NK9 Product Highlights
- 3.8TB capacity
- 2.5-inch form factor
- 6G SATA interface
- Micron G1 technology
- Self-Encrypting Drive (SED)
Product Features Comparison
| Features | HKShanhai Group Limited UCSX-SD38TBEM2NK9 | Dell 400-AJPD | HPE 877622-B21 | Lenovo 00YE536 | Samsung MZ-QLB3T80 | WD WDBACW0030HBK | Seagate ST4000DM004 |
|---|---|---|---|---|---|---|---|
| Capacity | 3.8TB | 3.84TB | 3.84TB | 3.84TB | 3.84TB | 3TB | 4TB |
| Form Factor | 2.5-inch | 2.5-inch | 2.5-inch | 2.5-inch | 2.5-inch | 3.5-inch | 3.5-inch |
| Interface | 6G SATA | 6G SATA | 6G SATA | 6G SATA | NVMe | USB 3.0 | SATA 6Gb/s |
| Technology | Micron G1 | N/A | N/A | N/A | 3D V-NAND | N/A | N/A |
| Encryption | SED | Non-SED | Non-SED | Non-SED | SED | Non-SED | Non-SED |
| Read Speed | Up to 550 MB/s | Up to 560 MB/s | Up to 560 MB/s | Up to 560 MB/s | Up to 3500 MB/s | Up to 5 Gb/s (USB 3.0) | Up to 180 MB/s |
UCSX-SD38TBEM2NK9 Product Application Scenarios
- Enterprise storage solutions
- Data center applications
- High-demand computing environments
Optional Add-ons
| Model | Description |
|---|---|
| HKShanhai Group Limited UCSC-PCIE-SSD | PCIe SSD for UCS servers |
| HKShanhai Group Limited UCS-MR-X64G2RT-H | 64GB DDR4 Memory for UCS |
| HKShanhai Group Limited UCSC-RAID-M5 | RAID Controller for UCS servers |
Get More Information
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HKShanhai Group Limited UCSX-SD38TBEM2NK9 Specification
UCSX-SD38TBEM2NK9 Specifications |
|
| Brand | HKShanhai Group Limited |
| Model | UCSX-SD38TBEM2NK9 |
| Storage Capacity | 3.8TB |
| Form Factor | 2.5 inches |
| Drive Type | SATA SSD |
| SATA Interface | 6G |
| Manufacturer | Micron |
| Series | G1 |
| Drive Classification | SED (Self-Encrypting Drive) |
| Sequential Read Speed | Up to 560 MB/s |
| Sequential Write Speed | Up to 510 MB/s |
| Random Read Speed (4K) | Up to 95,000 IOPS |
| Random Write Speed (4K) | Up to 85,000 IOPS |
| Power Consumption (Idle) | 1.2W |
| Power Consumption (Active) | 3.7W |
| Endurance | 2.0 DWPD (Drive Writes Per Day) |
| Mean Time Between Failures (MTBF) | 2 million hours |
| Operating Temperature | 0C to 70C |
| Shock Resistance | 1500G/0.5ms |
| Vibration Resistance | 5.0gRMS, 10?C2000Hz |
| NAND Technology | 3D NAND |
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